Chip Multilayer Ferrite RF Inductors

Multilayer Ferrite Chip Inductor

MIMultilayer Ferrite Chip Inductor - MI

Features

  • Sizes 0603 / 0805 / 1206.
  • Closed magnetic circuit avoids crosstalk.
  • Suitable for high density installation and re-flow soldering.

Applications

  • Portable Equipment.
  • Personal Computers.
  • CD-ROM, Hard Disk, Modem, Printers.

The Multilayer Chip Beads MF & MI Inductors are lead-free and RoHS compliant. Please contact us for details with your specific needs.

Chip Multilayer MI Inductors - Dimensions (unit: mm)

Chip Multilayer MI Inductors - Dimensions (unit: mm)      multilayer ferrite chip inductor
Type A B C D E F G
TRMI160808 (0603) 1.6 ± 0.2 0.8 ± 0.2 0.8 ± 0.2 0.3 ± 0.2 0.8 2.4~3.4 0.6
TRMI201209 (0805) 2.0 ± 0.2 1.25 ± 0.2 0.9 ± 0.2 0.5 ± 0.3 1.2 3.0~4.0 1.0
TRMI201212 (0805) 2.0 ± 0.2 1.25 ± 0.2 1.25 ± 0.2 0.5 ± 0.3 1.2 3.0~4.0 1.0
TRMI321611 (1206) 3.2 ± 0.2 1.6 ± 0.2 1.1 ± 0.2 0.5 ± 0.3 2.0 4.2~5.2 1.2

Electrical Characteristics for TRMI160808 (0603) Chip Multilayer

Part Number Inductance
(nH)		 Tolerance L/Q Freq.
(MHz)		 Q
(min)		 SRF
(MHz)(min)		 DCR
(Ω)(max)		 IDC
(mA)(max)
TRMI160808 - 10N 10 ± 20% 50MHz, 200mV 10 300 0.20 50
TRMI160808 - 33N 33 ± 20% 50MHz, 200mV 10 270 0.20 50
TRMI160808 - 47N 47 ± 20% 50MHz, 200mV 10 260 0.30 50
TRMI160808 - 56N 56 ± 20% 50MHz, 200mV 10 255 0.30 50
TRMI160808 - 68N 68 ± 20% 50MHz, 200mV 10 250 0.30 50
TRMI160808 - 82N 82 ± 20% 50MHz, 200mV 10 245 0.30 50
TRMI160808 - R10 100 ± 10, ± 20% 25MHz, 200mV 15 240 0.50 50
TRMI160808 - R12 120 ± 10, ± 20% 25MHz, 200mV 15 205 0.50 50
TRMI160808 - R15 150 ± 10, ± 20% 25MHz, 200mV 15 180 0.60 50
TRMI160808 - R18 180 ± 10, ± 20% 25MHz, 200mV 15 165 0.60 50
TRMI160808 - R22 220 ± 10, ± 20% 25MHz, 200mV 15 150 0.80 50
TRMI160808 - R27 270 ± 10, ± 20% 25MHz, 200mV 15 136 0.80 50
TRMI160808 - R33 330 ± 10, ± 20% 25MHz, 200mV 15 125 0.85 35
TRMI160808 - R39 390 ± 10, ± 20% 25MHz, 200mV 15 110 1.00 35
TRMI160808 - R47 470 ± 10, ± 20% 25MHz, 200mV 15 105 1.35 35
TRMI160808 - R56 560 ± 10, ± 20% 25MHz, 200mV 15 95 1.55 35
TRMI160808 - R68 680 ± 10, ± 20% 25MHz, 200mV 15 85 1.70 35
TRMI160808 - R82 820 ± 10, ± 20% 25MHz, 200mV 15 75 2.10 35
TRMI160808 - 1R0 1000 ± 10, ± 20% 10MHz, 200mV 35 65 0.60 25
TRMI160808 - 1R2 1200 ± 10, ± 20% 10MHz, 200mV 35 60 0.80 25
TRMI160808 - 1R5 1500 ± 10, ± 20% 10MHz, 200mV 35 55 0.80 25
TRMI160808 - 1R8 1800 ± 10, ± 20% 10MHz, 200mV 35 50 0.95 25
TRMI160808 - 2R2 2200 ± 10, ± 20% 10MHz, 200mV 35 45 1.55 15
TRMI160808 - 2R7 2700 ± 10, ± 20% 10MHz, 200mV 35 40 1.35 15
TRMI160808 - 3R3 3300 ± 10, ± 20% 10MHz, 200mV 35 38 1.55 15
TRMI160808 - 3R9 3900 ± 10, ± 20% 10MHz, 200mV 35 35 1.70 15
TRMI160808 - 4R7 4700 ± 10, ± 20% 10MHz, 200mV 35 33 2.10 15
TRMI160808 - 5R6 5600 ± 10, ± 20% 4MHz, 200mV 35 22 1.55 5
TRMI160808 - 6R8 6800 ± 10, ± 20% 4MHz, 200mV 35 20 1.70 5
TRMI160808 - 8R2 8200 ± 10, ± 20% 4MHz, 60 mV 30 18 2.10 5
TRMI160808 - 100 10000 ± 10, ± 20% 2MHz, 60mV 30 17 2.55 5

Electrical Characteristics for TRMI201209/12 (0805) Chip Multilayer

Part Number Inductance
(nH)		 Tolerance L/Q Freq.
(MHz)		 Q
(min)		 SRF
(MHz)(min)		 DCR
(Ω)(max)		 IDC
(mA)(max)
TRMI201209 - 47N 47 ± 20% 50MHz, 200mV 20 320 0.20 300
TRMI201209 - 56N 56 ± 20% 50MHz, 200mV 20 320 0.20 300
TRMI201209 - 68N 68 ± 20% 50MHz, 200mV 20 280 0.20 300
TRMI201209 - 82N 82 ± 20% 50MHz, 200mV 20 255 0.20 300
TRMI201209 - R10 100 ± 10, ± 20% 25MHz, 200mV 20 235 0.30 250
TRMI201209 - R12 120 ± 10, ± 20% 25MHz, 200mV 20 220 0.30 250
TRMI201209 - R15 150 ± 10, ± 20% 25MHz, 200mV 20 200 0.40 250
TRMI201209 - R18 180 ± 10, ± 20% 25MHz, 200mV 20 185 0.40 250
TRMI201209 - R22 220 ± 10, ± 20% 25MHz, 200mV 20 170 0.50 250
TRMI201209 - R27 270 ± 10, ± 20% 25MHz, 200mV 20 150 0.50 250
TRMI201209 - R33 330 ± 10, ± 20% 25MHz, 200mV 20 145 0.55 250
TRMI201209 - R39 390 ± 10, ± 20% 25MHz, 200mV 25 135 0.65 200
TRMI201209 - R47 470 ± 10, ± 20% 25MHz, 200mV 25 125 0.65 200
TRMI201209 - R56 560 ± 10, ± 20% 25MHz, 200mV 25 115 0.75 150
TRMI201209 - R68 680 ± 10, ± 20% 25MHz, 200mV 25 105 0.80 150
TRMI201209 - R82 820 ± 10, ± 20% 25MHz, 200mV 25 100 1.00 150
TRMI201209 - 1R0 1000 ± 10, ± 20% 10MHz, 200mV 45 75 0.40 50
TRMI201209 - 1R2 1200 ± 10, ± 20% 10MHz, 200mV 45 65 0.50 50
TRMI201209 - 1R5 1500 ± 10, ± 20% 10MHz, 200mV 45 60 0.50 50
TRMI201209 - 1R8 1800 ± 10, ± 20% 10MHz, 200mV 45 55 0.60 50
TRMI201209 - 2R2 2200 ± 10, ± 20% 10MHz, 200mV 45 50 0.65 30
Air Core Chip RF Inductor
TRMI201212 - 2R7 2700 ± 10, ± 20% 10MHz, 200mV 45 45 0.75 30
TRMI201212 - 3R3 3300 ± 10, ± 20% 10MHz, 200mV 45 41 0.80 30
TRMI201212 - 3R9 3900 ± 10, ± 20% 10MHz, 200mV 45 38 0.90 30
TRMI201212 - 4R7 4700 ± 10, ± 20% 10MHz, 200mV 45 35 1.00 30
TRMI201212 - 5R6 5600 ± 10, ± 20% 4MHz, 200mV 45 32 0.90 15
TRMI201212 - 6R8 6800 ± 10, ± 20% 4MHz, 200mV 45 29 1.00 15
TRMI201212 - 8R2 8200 ± 10, ± 20% 4MHz, 200mV 45 26 1.10 15
TRMI201212 - 100 10000 ± 10, ± 20% 2MHz, 60mV 45 24 1.15 15
TRMI201212 - 120 12000 ± 10, ± 20% 2MHz, 60mV 45 22 1.25 15
TRMI201212 - 150 15000 ± 10, ± 20% 1MHz, 60mV 30 19 0.80 5
TRMI201212 - 180 18000 ± 10, ± 20% 1MHz, 60mV 30 18 0.90 5
TRMI201212 - 220 22000 ± 10, ± 20% 1MHz, 60mV 30 16 1.10 5

Electrical Characteristics for TRMI321611 (1206) Chip Multilayer

Part Number Inductance
(nH)		 Tolerance L/Q Freq.
(MHz)		 Q
(min)		 SRF
(MHz)(min)		 DCR
(Ω)(max)		 IDC
(mA)(max)
TRMI321611 - 47N 47 ± 20% 50MHz, 200mV 20 320 0.15 300
TRMI321611 - 56N 56 ± 20% 50MHz, 200mV 20 280 0.25 300
TRMI321611 - 68N 68 ± 20% 50MHz, 200mV 20 280 0.25 300
TRMI321611 - 82N 82 ± 20% 50MHz, 200mV 20 250 0.25 300
TRMI321611 - R10 100 ± 10, ± 20% 25MHz, 200mV 20 235 0.25 250
TRMI321611 - R12 120 ± 10, ± 20% 25MHz, 200mV 20 220 0.30 250
TRMI321611 - R15 150 ± 10, ± 20% 25MHz, 200mV 20 200 0.30 250
TRMI321611 - R18 180 ± 10, ± 20% 25MHz, 200mV 20 185 0.40 250
TRMI321611 - R22 220 ± 10, ± 20% 25MHz, 200mV 20 170 0.40 250
TRMI321611 - R27 270 ± 10, ± 20% 25MHz, 200mV 20 150 0.50 250
TRMI321611 - R33 330 ± 10, ± 20% 25MHz, 200mV 20 145 0.60 250
TRMI321611 - R39 390 ± 10, ± 20% 25MHz, 200mV 25 135 0.50 200
TRMI321611 - R47 470 ± 10, ± 20% 25MHz, 200mV 25 125 0.60 200
TRMI321611 - R56 560 ± 10, ± 20% 25MHz, 200mV 25 115 0.70 150
TRMI321611 - R68 680 ± 10, ± 20% 25MHz, 200mV 25 105 0.80 150
TRMI321611 - R82 820 ± 10, ± 20% 25MHz, 200mV 25 100 0.90 150
TRMI321611 - 1R0 1000 ± 10, ± 20% 10MHz, 200mV 45 75 0.40 100
TRMI321611 - 1R2 1200 ± 10, ± 20% 10MHz, 200mV 45 65 0.50 100
TRMI321611 - 1R5 1500 ± 10, ± 20% 10MHz, 200mV 45 60 0.50 80
TRMI321611 - 1R8 1800 ± 10, ± 20% 10MHz, 200mV 45 55 0.50 70
TRMI321611 - 2R2 2200 ± 10, ± 20% 10MHz, 200mV 45 50 0.60 60
TRMI321611 - 2R7 2700 ± 10, ± 20% 10MHz, 200mV 45 45 0.60 60
TRMI321611 - 3R3 3300 ± 10, ± 20% 10MHz, 200mV 45 41 0.70 60
TRMI321611 - 3R9 3900 ± 10, ± 20% 10MHz, 200mV 45 38 0.80 50
TRMI321611 - 4R7 4700 ± 10, ± 20% 10MHz, 200mV 45 35 0.90 50
TRMI321611 - 5R6 5600 ± 10, ± 20% 4MHz, 200mV 45 32 0.70 25
TRMI321611 - 6R8 6800 ± 10, ± 20% 4MHz, 200mV 45 29 0.80 25
TRMI321611 - 8R2 8200 ± 10, ± 20% 4MHz, 200mV 45 26 0.90 25
TRMI321611 - 100 10000 ± 10, ± 20% 2MHz, 60mV 45 24 1.00 25
TRMI321611 - 120 12000 ± 10, ± 20% 2MHz, 60mV 45 22 1.05 15
TRMI321611 - 150 15000 ± 10, ± 20% 1MHz, 60mV 35 19 0.70 5
TRMI321611 - 180 18000 ± 10, ± 20% 1MHz, 60mV 35 18 0.75 5
TRMI321611 - 220 22000 ± 10, ± 20% 1MHz, 60mV 35 16 0.90 5
TRMI321611 - 270 27000 ± 10, ± 20% 1MHz, 60mV 35 14 0.90 5
TRMI321611 - 330 33000 ± 10, ± 20% 1MHz, 60mV 35 13 1.05 5

Environmental Characteristics - MI Multilayer Ferrite Chip Inductor

Item Specification Test Methods
Inductance Refer to standard electrical characteristic spec. HP4291B
Q HP4291B
SRF HP4291B
DC Resistance RDC AX-1152B
Rated Current IDC Applied the current to coils, The inductance change should be less than 10% to initial value

Environmental Characteristics - MI Multilayer Ferrite Chip Inductor

Item Specification Test Methods
Flexure Strength The forces applied on the right conditions must not damage the terminal electrode and the ferrite. Test device shall be soldered on the substrate Substrate Dimension:100×40×1.6mm
Deflection: 2.0mm
Keeping Time: 30sec
For 0402, substrate dimension is 100×40×0.8mm
Vibration Test device shall be soldered on the substrate
Oscillation Frequency : 10 to 55 to 10Hz for 1min Amplitude : 1.5mm
Time : 2hrs for each axis (X,Y&Z), total 6hrs
Resistance to Soldering Heat Appearance: No damage
More than 75% of the terminal.
Electrode should be covered with solder.
Inductance: within ± 15% of initial value
Q: within ± 30% of initial value
Inductance: within± 20% of initial value (0603 over 12uH)		 Pre-heating: 150°C, 1min
Solder Composition: Sn/Ag3.0/Cu0.5 (Pb-Free)
Solder Temperature: 260 ± 5°C(Pb-Free)
Immersion Time: 10 ± 1sec
Solderability The electrodes shall be at least 90% covered with new solder coating Pre-heating: 150°C, 1min
Solder Composition: Sn/Ag3.0/Cu0.5 (Pb-Free)
Solder Temperature: 245 ± 5°C(Pb-Free)
Immersion Time: 4 ± 1sec
Temperature Cycle Appearance: No damage
L change: within± 10% of initial value
Q change: within± 30% of initial value		 One cycle:
step1: -25 ± 3°C for 30min
step2: 25 ± 2°C for 3.0min
step3: 85 ± 3°C for 30min
step4: 25 ± 2°C for 3.0min
Total: 100cycles
Measured after exposure in the room condition for 24hrs
Humidity Resistance Temperature: 40 ± 2°C
Relative Humidity: 90 ~ 95%
Time: 1000hrs
Measured after exposure in the room condition for 24hrs
High Temperature Resistance Temperature: 125 ± 3°C
Relative Humidity : 20%
Applied Current: Rated Current
Time: 1000hrs
Measured after exposure in the room condition for 24hrs
Low Temperature Resistance Temperature: -25 ± 3°C
Relative Humidity : 0%
Time: 1000hrs
Measured after exposure in the room condition for 24hrs

How to Order - Chip Multilayer RF Inductors MI

TRMI160808 - 10N M
Type
Multilayer Chip Inductors:
(TRMI160808, TRMI201209, TRMI201212, TRMI321611)
Inductance
10N 10nH
56N 56nH
R68 680nH
180 18000nH
Tolerance
S 0.3nH
J 5%
K 10%
M 20%

PDF download

Multilayer Ferrite Chip Inductors - MI Series